DGSI / Flash Ingérence n°65 – Les risques d’escroqueries liées au COVID-19
INGERENCE ECONOMIQUE Flash n° 65 – Avril 2020 Ce « flash » évoque des actions d’ingérence économique dont des sociétés françaises sont régulièrement victimes. Ayant vocation à illustrer la diversité […]
Veille NAE : Fiabilité électronique 20200511
Chaque semaine NAE vous propose une veille technologique sur une thématique de sa feuille de route technologique. Aujourd’hui retrouvez sa veille sur la thématique Fiabilité électronique qui abordera : Stability and […]
Stability and Reliability of Lateral GaN PowerField-Effect Transistors
Temperature estimation of MOSFET is crucial, for failure of semiconductors is closely related to the junction temperature. In order to improve the reliability of semiconductor devices, it is necessary to […]
Analysis of an AlGaN/AlN Super-Lattice Buffer Concept for 650-V Low-Dispersion and High-Reliability GaN HEMTs – IEEE Journals & Magazine
In this article, an optimized carbon-doped AlGaN/AlN super-lattice (SL) buffer structure for GaN-based high electron mobility transistors, grown on 200-mm Si wafers is demonstrated. The resulting transistor structure features: 1) […]
Reliability of SiC MOSFET with Danfoss Bond Buffer Technology in Automotive Traction Power Modules – VDE Conference Publication
This paper describes reliability investigations in terms of power cycling tests for a new generation of top-side sintered or soldered 1200 V silicon carbide (SiC) MOSFETs for use in an […]
Dynamic Temperature Measurements of a GaN DC–DC Boost Converter at MHz Frequencies – IEEE Journals & Magazine
For reliability predictions, gallium nitride transistors require accurate estimations of the peak operating temperatures within the device. This article presents a new application of thermoreflectance-based temperature measurements performed on a […]
Packaging for SiC power device – IEEE Conference Publication
The wide band gap nature of SiC semiconductor makes high voltage power device possible to operate at high temperature. The high temperature operation of power device is expected to realize […]
A Review of Raman Thermography for Electronic and Opto-Electronic Device Measurement With Submicron Spatial and Nanosecond Temporal Resolution – IEEE Journals & Magazine
We review the Raman thermography technique, which has been developed to determine the temperature in and around the active area of semiconductor devices with submicron spatial and nanosecond temporal resolution. […]
Thermal Characterization of SiC Modules for Variable Frequency Drives – IEEE Conference Publication
In this paper, the advantages of SiC power modules to reduce peak junction temperature and power cycling effects are presented. A detailed power loss calculation and thermal model is developed […]
A Novel Method for Monitoring the Junction Temperature of SiC MOSFET On-line Based on On-state Resistance – IEEE Conference Publication
Temperature estimation of MOSFET is crucial, for failure of semiconductors is closely related to the junction temperature. In order to improve the reliability of semiconductor devices, it is necessary to […]
Transient thermal dynamics of GaN HEMTs – IEEE Conference Publication
Although GaN high electron mobility transistors (HEMTs) are one of the most promising semiconductor technologies for high power and high frequency applications, high device temperatures often lead to degraded performance […]
Microdrones Introduces Drone LiDAR and Surveying Services | Unmanned Systems Technology
Microdrones has launched mdaaS (Microdrones as a Service), a new program providing the company’s drone survey equipment and solutions to surveyors and geomatics professionals via convenient hardware and software packages […]
L’usine de poudre métallique de Sandvik Additive Manufacturing obtient une certification pour l’aérospatiale
Le fabricant suédois de poudres métalliques Sandvik, a annoncé que sa nouvelle usine de poudre de titane et d’alliages à base de nickel, basée à Sandviken, avait reçu la prestigieuse […]
Integration of metallic phase change material in power electronics – IEEE Conference Publication
For various pulsed power electronics like, metal oxide semiconductor field-effect transistor (MOSFET), insulating gate bipolar transistor (IGBT), Gate turn-off thyristor (GTO), Integrated gate-commutated thyristor (IGCT), heat loads are often in […]
An ultra high performance heat sink using a novel hybrid impinging microjet — Microchannel structure – IEEE Conference Publication
This work describes the development of a single phase water-cooled microfluidic heat exchanger for cooling very high heat flux electronics. The heat sink was designed for a unique additive manufacturing […]
A Ka-Band 3D Printed Magneto-Electric Dipole Antenna Array – IEEE Conference Publication
A broadband aperture-coupled magneto-electric (ME) dipole antenna array designed for metallic additive manufacturing (AM) is proposed. The proposed array antenna that operates in Ka-band consists of four radiating elements, a […]
Retour sur Terre de la capsule chinoise XZF
Chaque fin de semaine, une image qui a fait l’actualité ou retenu notre attention. Le 8 mai, un vaisseau habité chinois de seconde génération, simulant la fin d’une mission lunaire, […]
Airbus réussit à maintenir ses ventes d’avions
Malgré la crise créée par la pandémie de coronavirus, Airbus réussit à maintenir ses ventes nettes d’avions de ligne qui frôlent les 300 unités sur les quatre premiers mois. Par […]
La Norvège investit pour sa défense
Soutenir les forces.Le 17 avril, le ministère de la défense norvégien a annoncé que le nouveau plan de défense du pays avait été présenté par le gouvernement. Intitulé « plan […]
Trois études d’atterrisseurs lunaires habités financées par la Nasa
Objectif 2024La Nasa vise toujours un retour sur la Lune avec des astronautes d’ici quatre ans, comme l’a réclamé le président américain Donald Trump en mars 2019.Le 30 septembre dernier, […]