This paper describes reliability investigations in terms of power cycling tests for a new generation of top-side sintered or soldered 1200 V silicon carbide (SiC) MOSFETs for use in an advanced power module, designed for operation with 800 V bus voltage in electric vehicle drive trains. The MOSFETs were packaged with different bonding and joining technologies. A power module assembly technique using sintered SiC MOSFETs interconnected with a sintered copper (Cu) foil and attached Cu wires was compared with
