Although GaN high electron mobility transistors (HEMTs) are one of the most promising semiconductor technologies for high power and high frequency applications, high device temperatures often lead to degraded performance and reliability. Most reports on the thermal characterization of GaN HEMTs have focused on the steady state temperature rise in spite of the prevalence of time-dependent power dissipation in aerospace, defense, and communications applications. In this work, we utilize analytical solutions t
Source : Transient thermal dynamics of GaN HEMTs – IEEE Conference Publication
