Researchers at Fraunhofer IAF have made a breakthrough in the field of semiconductor materials: With aluminum yttrium nitride (AlYN), they have succeeded in fabricating and characterizing a new and promising semiconductor material using the MOCVD process.
Due to its excellent material properties and its adaptability to gallium nitride (GaN), AlYN has enormous potential for use in energy-efficient high-frequency and high-performance electronics for information and communications technology.
Pour en savoir plus : Le nouveau matériau semi-conducteur AlYN promet une électronique plus économe en énergie et plus puissante