STMicroelectronics supplying SiC technology for Semikron next-generation eMPack power modules for EVs – Green Car Congress
STMicroelectronics is supplying silicon carbide (SiC) technology for eMPack electric-vehicle (EV) power modules from Semikron, a leading manufacturer of power modules and systems. This is the result of a four-year […]
Investigation of reliability of NO nitrided SiC(1100) MOS devices | IEEE Conference Publication | IEEE Xplore
We systematically investigated the interface properties and reliability of NO nitrided SiC(11¯00) m-face MOS devices. Although nitridation at 1250°C improved the capacitance-voltage characteristics (i.e., flat-band voltage (V FB ) shift […]
Next-gen semiconductor fast-charges flagship folding-screen smartphone
Navitas Semiconductor’s next-generation GaNFast power ICs with GaNSense technology has been chosen to power vivo’s newly released, first folding-screen flagship ‘X Fold’ in-box 80W flash charger. The vivo X Fold […]
Walgreens & Alphabet Launch Inaugural Drone Deliveries In DFW
Walgreens, one of the nation’s oldest and well-known pharmacy chains, has had an astounding last few years. In addition to providing numerous retail services to communities during the Covid-19 pandemic, […]
Collins Aerospace va développer des actionneurs de nouvelle génération en France
Collins Aerospace a été sélectionné par la Direction Générale de l’Aviation Civile, DGAC pour un programme de recherche et développement de quatre ans afin de développer des actionneurs intelligents pour […]
350-V GaN Transistor: 20X Smaller than Comparable Silicon and Lower Cost | Electronic Design
Wide-bandgap (WBG) power electronics devices reduce component size, increase efficiency, and improve performance for hybrid and all-electric vehicles. In particular, gallium nitride’s (GaN) exceptionally high electron mobility and low temperature […]
Influence of Driving Circuit Parameters and Layout Compactness on the Optimum Selection of Gate-Source Voltage Test Point for SiC MOSFETs | IEEE Conference Publication | IEEE Xplore
Accurate measurement of the gate-source voltage for silicon carbide (SiC) MOSFET is an essential prerequisite for correctly evaluating the reliability of driving circuit. Due to the high switching speed of […]
Study on ESD Protection Device Based on 4H-SiC GGNMOS with Improved Snapback Characteristics | IEEE Conference Publication | IEEE Xplore
In this paper, we propose a new structure of 4H-SiC-based ESD(Electrostatic discharge) protection device with low on-resistance and excellent high-temperature characteristics while improving trigger technology by applying floating technology. By […]
Appel à projets : « Produire en France des aéronefs bas carbone »
La France, en tant qu’un des leaders de l’industrie aéronautique mondiale, dispose d’atouts pour être pionnière dans la décarbonation du transport aérien, en actionnant simultanément plusieurs leviers complémentaires complexes et […]
SiC power devices enable new levels of efficiency and reliability
Microchip Technology Inc. has expanded its SiC portfolio by releasing the industry’s lowest on-resistance [RDS(on)] 3.3kV SiC MOSFETs and the highest current-rated SiC SBDs obtainable in the market, allowing designers […]