GaN HEMTs feature breakthrough withstand gate voltage
ROHMs 150V GaN HEMTs, GNE10xxTB series (GNE1040TB) improve the gate withstand voltage (rated gate-source voltage) to an industry-leading 8V – ideally to be used in power supply circuits for industrial […]
Monolithic integration of GaN components boosts power integrated circuits
For decades, silicon-based power transistors (MOSFETs, field-effect transistors) formed the backbone of power conversion systems that convert alternating current (AC) into direct current (DC) and vice versa, or DC from […]
Calls for Proposals – Clean Aviation
The 1st Call for Proposals for Clean Aviation has been launched! The list of topics and topic descriptions are currently available via the JU website: here. Important Note: All the Call documentation (e.g. […]
TE combine signaux RF et optiques dans des modules hybrides pour systèmes VPX – VIPress.net
Le module optique/NanoRF de TE Connectivity intègre dans un même boîtier compatible avec le format VPX, interconnexions optiques de type MT et radiofréquences afin de répondre aux exigences des applications […]
What is d-GaN, e-GaN and v-GaN power? – Power Electronic Tips
Gallium-nitride (GaN) power semiconductors are well-established, but compared with silicon (Si) devices, GaN is still an evolving power device technology. Most power designers have at least explored the use of […]
How reliable are GaN HEMTs? – Power Electronic Tips
GaN HEMTs are very reliable, but the precise answer is still being refined. Reliability relates to anticipated useful life and is typically measured in mean-time-to-failure. Reliability can be anticipated and […]
Is Double Pulse Testing inadequate for GaN devices? – Power Electronic Tips
Enhancement mode (e-mode) GaN high electron mobility transistors (HEMTs) generally behave like n-channel power MOSFETs. Common curve tracers, parametric analyzers, and automatic discrete device parametric testers used for an n-channel […]
La maîtrise de la fiabilité des systèmes et composants, un enjeu pour de nombreux secteurs industriels
Rouen, le 07 février 2022 – Regroupement d’experts de la fiabilité des systèmes et des composants électroniques, le Centre Français de Fiabilité (CFF) concourt à une meilleure fiabilité des systèmes […]
Power Integration launches Automotive-Qualified High-Voltage Flyback Switcher ICs with 1700 V SiC MOSFET
Electric vehicles are increasingly driving on our roads, the majority of them are powered by a battery (BEV) and only a few models by a fuel-cell. The foreseeable future for […]
Les Rendez-Vous Fiabilité du CFF – 11/04/2023
Venez partager un temps d’échanges sur pour vous présenter les compétences au sein de la communauté CFF, et de donner « carte blanche » à un membre pour présenter des travaux, des […]