Wide-bandgap (WBG) power electronics devices reduce component size, increase efficiency, and improve performance for hybrid and all-electric vehicles. In particular, gallium nitride’s (GaN) exceptionally high electron mobility and low temperature coefficient allows...
Accurate measurement of the gate-source voltage for silicon carbide (SiC) MOSFET is an essential prerequisite for correctly evaluating the reliability of driving circuit. Due to the high switching speed of SiC MOSFET, it is more sensitive to parasitic parameters of...
In this paper, we propose a new structure of 4H-SiC-based ESD(Electrostatic discharge) protection device with low on-resistance and excellent high-temperature characteristics while improving trigger technology by applying floating technology. By TLP measurement, the...
La France, en tant qu’un des leaders de l’industrie aéronautique mondiale, dispose d’atouts pour être pionnière dans la décarbonation du transport aérien, en actionnant simultanément plusieurs leviers complémentaires complexes et ambitieux, parmi lesquels figure la...
Microchip Technology Inc. has expanded its SiC portfolio by releasing the industry’s lowest on-resistance [RDS(on)] 3.3kV SiC MOSFETs and the highest current-rated SiC SBDs obtainable in the market, allowing designers to take advantage of ruggedness, reliability...
