ROHMs 150V GaN HEMTs, GNE10xxTB series (GNE1040TB) improve the gate withstand voltage (rated gate-source voltage) to an industry-leading 8V – ideally to be used in power supply circuits for industrial equipment including base stations and data centres together with...
For decades, silicon-based power transistors (MOSFETs, field-effect transistors) formed the backbone of power conversion systems that convert alternating current (AC) into direct current (DC) and vice versa, or DC from low voltage to high voltage and vice versa. In...
The 1st Call for Proposals for Clean Aviation has been launched! The list of topics and topic descriptions are currently available via the JU website: here. Important Note: All the Call documentation (e.g. list of topics and topic descriptions, call background...
Le module optique/NanoRF de TE Connectivity intègre dans un même boîtier compatible avec le format VPX, interconnexions optiques de type MT et radiofréquences afin de répondre aux exigences des applications de défense nécessitant de fortes bandes passantes. ...
Gallium-nitride (GaN) power semiconductors are well-established, but compared with silicon (Si) devices, GaN is still an evolving power device technology. Most power designers have at least explored the use of GaN, whether it’s been depletion-mode (d-GaN) normally-on...
