Power switches based on the wide bandgap (WBG) material gallium nitride (GaN) enable excellent efficiency and high switching frequency, starting a new era in power electronics. To support this development, Infineon Technologies AG adds the new CoolGaN IPS family of...
Geneva, May 6, 2021 – STMicroelectronics (NYSE: STM), a global semiconductor leader serving customers across the spectrum of electronics applications, has announced a new family of ST Intelligent and Integrated Gallium Nitride (GaN) solutions, STi2GaN. STi2GaN is an...
Ces dernières années, l’opportunité de recréer ou non une filière de munitions de petit calibre afin de sécuriser l’approvisionnement des forces françaises a régulièrement fait l’objet de débats, notamment au Parlement, la question des matériaux critiques, pourtant...
Les technologies à base de nitrure de gallium (GaN) ont fait ces dernières années l’objet d’études qui ont confirmé leur aptitude à apporter de véritables gains en puissance, compacité, efficacité, rendement et fiabilité jusqu’alors inaccessibles....
SiC merged reverse conductive (MRC) power devices composed of both unipolar devices and bipolar devices have been developed to achieve a smaller chip size, a lower power loss, and a higher reliability. SiC MRC power devices such as SiC MRC‐MOSFET and SiC MRC‐IGBT can...
