Veille NAE : Fiabilité électronique 20220509
Chaque semaine NAE vous propose une veille technologique sur une thématique de sa feuille de route technologique. Aujourd’hui retrouvez sa veille sur la thématique Fiabilité électronique qui abordera : Investigation of reliability of […]
Investigation of reliability of NO nitrided SiC(1100) MOS devices | IEEE Conference Publication | IEEE Xplore
We systematically investigated the interface properties and reliability of NO nitrided SiC(11¯00) m-face MOS devices. Although nitridation at 1250°C improved the capacitance-voltage characteristics (i.e., flat-band voltage (V FB ) shift […]
Power Cycling Reliability of SiC MOSFETs in Discrete and Module Packages | IEEE Conference Publication | IEEE Xplore
This paper presents an analysis of power cycling (PC) capabilities of two industry-standard packages with silicon carbide power MOSFET dies: the discrete TO-247 package and a base-plate-less power module with […]
Next-gen semiconductor fast-charges flagship folding-screen smartphone
Navitas Semiconductor’s next-generation GaNFast power ICs with GaNSense technology has been chosen to power vivo’s newly released, first folding-screen flagship ‘X Fold’ in-box 80W flash charger. The vivo X Fold […]
Walgreens & Alphabet Launch Inaugural Drone Deliveries In DFW
Walgreens, one of the nation’s oldest and well-known pharmacy chains, has had an astounding last few years. In addition to providing numerous retail services to communities during the Covid-19 pandemic, […]
Collins Aerospace va développer des actionneurs de nouvelle génération en France
Collins Aerospace a été sélectionné par la Direction Générale de l’Aviation Civile, DGAC pour un programme de recherche et développement de quatre ans afin de développer des actionneurs intelligents pour […]
350-V GaN Transistor: 20X Smaller than Comparable Silicon and Lower Cost | Electronic Design
Wide-bandgap (WBG) power electronics devices reduce component size, increase efficiency, and improve performance for hybrid and all-electric vehicles. In particular, gallium nitride’s (GaN) exceptionally high electron mobility and low temperature […]
Influence of Driving Circuit Parameters and Layout Compactness on the Optimum Selection of Gate-Source Voltage Test Point for SiC MOSFETs | IEEE Conference Publication | IEEE Xplore
Accurate measurement of the gate-source voltage for silicon carbide (SiC) MOSFET is an essential prerequisite for correctly evaluating the reliability of driving circuit. Due to the high switching speed of […]
Study on ESD Protection Device Based on 4H-SiC GGNMOS with Improved Snapback Characteristics | IEEE Conference Publication | IEEE Xplore
In this paper, we propose a new structure of 4H-SiC-based ESD(Electrostatic discharge) protection device with low on-resistance and excellent high-temperature characteristics while improving trigger technology by applying floating technology. By […]
Appel à projets : « Produire en France des aéronefs bas carbone »
La France, en tant qu’un des leaders de l’industrie aéronautique mondiale, dispose d’atouts pour être pionnière dans la décarbonation du transport aérien, en actionnant simultanément plusieurs leviers complémentaires complexes et […]