SiC power devices enable new levels of efficiency and reliability
Microchip Technology Inc. has expanded its SiC portfolio by releasing the industry’s lowest on-resistance [RDS(on)] 3.3kV SiC MOSFETs and the highest current-rated SiC SBDs obtainable in the market, allowing designers […]
GaN HEMTs feature breakthrough withstand gate voltage
ROHMs 150V GaN HEMTs, GNE10xxTB series (GNE1040TB) improve the gate withstand voltage (rated gate-source voltage) to an industry-leading 8V – ideally to be used in power supply circuits for industrial […]
Veille NAE : Fiabilité électronique 20220328
Chaque semaine NAE vous propose une veille technologique sur une thématique de sa feuille de route technologique. Aujourd’hui retrouvez sa veille sur la thématique Fiabilité électronique qui abordera : Avion vert : NAE […]
Monolithic integration of GaN components boosts power integrated circuits
For decades, silicon-based power transistors (MOSFETs, field-effect transistors) formed the backbone of power conversion systems that convert alternating current (AC) into direct current (DC) and vice versa, or DC from […]
Calls for Proposals – Clean Aviation
The 1st Call for Proposals for Clean Aviation has been launched! The list of topics and topic descriptions are currently available via the JU website: here. Important Note: All the Call documentation (e.g. […]
TE combine signaux RF et optiques dans des modules hybrides pour systèmes VPX – VIPress.net
Le module optique/NanoRF de TE Connectivity intègre dans un même boîtier compatible avec le format VPX, interconnexions optiques de type MT et radiofréquences afin de répondre aux exigences des applications […]
Veille NAE : Fiabilité électronique 20220228
Chaque semaine NAE vous propose une veille technologique sur une thématique de sa feuille de route technologique. Aujourd’hui retrouvez sa veille sur la thématique Fiabilité électronique qui abordera : Is Double-Pulse Testing inadequate […]
What is d-GaN, e-GaN and v-GaN power? – Power Electronic Tips
Gallium-nitride (GaN) power semiconductors are well-established, but compared with silicon (Si) devices, GaN is still an evolving power device technology. Most power designers have at least explored the use of […]
How reliable are GaN HEMTs? – Power Electronic Tips
GaN HEMTs are very reliable, but the precise answer is still being refined. Reliability relates to anticipated useful life and is typically measured in mean-time-to-failure. Reliability can be anticipated and […]
Is Double Pulse Testing inadequate for GaN devices? – Power Electronic Tips
Enhancement mode (e-mode) GaN high electron mobility transistors (HEMTs) generally behave like n-channel power MOSFETs. Common curve tracers, parametric analyzers, and automatic discrete device parametric testers used for an n-channel […]