Gate-Driver Integrated Junction Temperature Estimation of SiC MOSFET Modules | IEEE Journals & Magazine | IEEE Xplore
SiC MOSFET power modules are becoming global solutions in systems operating in harsh environment, and due to large economic implications, achieving reliability of such systems is of utmost importance. Thereby, […]
Scopus – Miller Capacitance Cancellation to Improve SiC MOSFET’s Performance in a Phase-Leg Configuration
The drain to gate capacitance (Miller capacitance) of SiC MOSFETs leads to the Miller effect during switching transients. The Miller capacitance in a phase-leg configuration causes the crosstalk, the interaction […]
Scopus preview – Scopus – Document details – Operation and performance of the 4H-SiC junctionless FinFET
This work presents a comprehensive study on the behaviour and operation of a vertical 1.2 kV 4H-SiC junctionless power FinFET. The increased bulk conduction in the channel of this topology […]
Bias Temperature Instability of Silicon Carbide Power MOSFET under AC Gate Stresses | IEEE Journals & Magazine | IEEE Xplore
With increasing applications of silicon carbide (SiC) power MOSFETs, more attention is being paid to reliability issues, among which the long-term stability of the gate threshold voltage is of paramount […]
Scopus preview – Scopus – Document details – Scanning thermal microscopy for accurate nanoscale device thermography
We investigate the accuracy and reliability of temperature mapping using scanning thermal microscopy (SThM) in contact and PeakForce tapping mode on the example of a GaN-on-SiC high electron mobility transistor […]
Scopus preview – Scopus – Document details – Ultralight, compressible, and high-temperature-resistant dual-phase SiC/Si3N4 felt for efficient electromagnetic wave attenuation
The ingenious multicomponent microstructure design provides a suitable strategy for gaining high-performance multi-functional integrated materials. Herein, the thermally stable SiC/Si3N4 composite ceramic felt was successfully fabricated via two-step carbothermal reduction […]
ON Semi announces SiC MOSFET modules for Charging EVs – News
ON Semiconductor has announced a pair of 1200 V full SiC MOSFET 2-PACK modules further enhancing their range of products suitable for the challenging electric vehicle (EV) market. As sales […]
AC-DC converter chip first to integrate 1700V SiC MOSFET
The BM2SC12xFP2-LBZ AC-DC converter series from Rohm is aimed at industrial applications such as auxiliary power supplies for street lamps, commercial air-conditioning systems, general-purpose inverters and for AC servo drives. […]
Les modules de puissance en SiC ciblent la recharge rapide des véhicules électriques – VIPress.net
ON Semiconductor profitera de la prochaine manifestation Apec pour dévoiler des modules de puissance 1200 V en technologie carbure de silicium aptes à répondre aux exigences de la recharge rapide […]
MOSFET durcis aux radiations qualifiés pour les satellites commerciaux et militaires
La nouvelle famille de transistors M6 ™ MRH25N12U3 de Microchip supporte les conditions hostiles de l’espace et améliore la fiabilité des circuits d’alimentation… Les alimentations sur les applications spatiales fonctionnent […]