Generating context-specific sports training plans by combining generative adversarial networks
Personalized sports training plans are essential for addressing individual athlete needs, but traditional methods often need to integrate diverse data types, limiting adaptability and effectiveness. Existing machine learning (ML) and […]
Exceptional reliability and stability AuNis–AlGaN/GaN HEMT sensor for pH detection
AlGaN/GaN high electron mobility transistor (HEMT) biosensors have garnered significant attention due to their highly sensitive two-dimensional electron gas (2DEG) channel. Open-gate HEMT structure is commonly employed, utilizing various sensing […]
Assessing the reliability of SiC MOSFET through inverter-like accelerated test vs. power cycling
Silicon carbide (SiC) MOSFETs are known for their superior performance compared to traditional silicon devices, making them well-suited for a wide range of applications in power electronics. However, there is […]
SemiQ launches QSiC 1700V series of high-reliability, low-loss SiC MOSFETs
SemiQ Inc of Lake Forest, CA, USA — which designs, develops and manufactures silicon carbide (SiC) power semiconductors and 150mm SiC epitaxial wafers for high-voltage applications — has announced a […]
XSICM03 : Une avancée technologique pour les MOSFET SiC
La plateforme XSICM03 de nouvelle génération offre une réduction de la taille des cellules de conception tout en maintenant des contrôles de processus robustes, ainsi que des performances de fuite […]
Preconditioning of Ohmic p-GaN power HEMT for reproducible Vth measurements
The fluctuation of the threshold voltage (Vth) presents a challenge while monitoring electrical drift in reliability studies of GaN HEMTs. While technologies, such as ohmic p-GaN, may lessen V th […]
ROHM’s PMICs for SoCs Adopted in Reference Designs for Telechips’ Next-Generation Cockpits
Santa Clara, CA and Kyoto, Japan, Dec. 12, 2024 (GLOBE NEWSWIRE) — ROHM Semiconductor today announced the adoption of its PMICs in power reference designs focused on the next-generation cockpit SoCs Dolphin3 […]
Optimisation des propriétés de conversion électromécanique des polymères et leurs applications
Les matériaux électroactifs organiques, susceptibles de présenter de bonnes propriétés des couplages électromécaniques, ouvrent la voie à de nombreuses applications d’actionneurs et/ou capteurs hautement intégrables aux structures. Cela permettra à […]
Reliability of GaN MOSc-HEMTs: From TDDB to threshold voltage instabilities
In this paper, we review the gate reliability of the GaN MOSc-HEMT as well as the specific method to address the peculiarities of these transistors. The long term forward gate […]
Vertical GaN devices: Reliability challenges and lessons learned from Si and SiC
We discuss recent advancements in the development of vertical GaN devices, and the related reliability challenges. Key results indicate that: (i) vertical GaN devices can show high performance, low background […]